The banner line description of the BUK9535 power MOSFET is given as,
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
In the sub-threshold region we can fit the drain current to the following basic exponential model,
$$ I_D =I_S \exp\left( \dfrac{V_{GS}}{\eta V_T}\right) $$
Continue reading “Sub-Threshold Conduction of a Power MOSFET”